One of the crucial keys to solid state electronics is the nature of the P-N junction. When p-type and n-type materials are placed in contact with each other, the junction behaves very differently than either type of material alone. Specifically, current will flow readily in one direction (forward biased) but not in the other (reverse biased), creating the basic diode. This non-reversing behavior arises from the nature of the charge transport process in the two types of materials.

The open circles on the left side of the junction above represent "holes" or deficiencies of electrons in the lattice which can act like positive charge carriers. The solid circles on the right of the junction represent the available electrons from the n-type dopant. Near the junction, electrons diffuse across to combine with holes, creating a "depletion region". The energy level sketch above right is a way to visualize the equilibrium condition of the P-N junction. The upward direction in the diagram represents increasing electron energy.



DEPLETION REGION


When a p-n junction is formed, some of the free electrons in the n-region diffuse across the junction and combine with holes to form negative ions. In so doing they leave behind positive ions at the donor impurity sites.


Details of Depletion Region

In the p-type region there are holes from the acceptor impurities and in the n-type region there are extra electrons.
When a p-n junction is formed, some of the electrons from the n-region which have reached the conduction band are free to diffuse across the junction and combine with holes.
Filling a hole makes a negative ion and leaves behind a positive ion on the n-side. A space charge builds up, creating a depletion region which inhibits any further electron transfer unless it is helped by putting a forward bias on the junction.



BIAS EFFECT ON ELECTRONS IN DEPLETION REGION


Equilibrium of P-N Junction

For a p-n junction at equilibrium, the Fermi levels match on the two sides of the junctions. Electrons and holes reach an equilibrium at the junction and form a depletion region. The upward direction in the diagram represents increasing electron energy. That implies that you would have to supply energy to get an electron to go up on the diagram, and supply energy to get a hole to go down.

Reverse-Bias of P-N Junction

To reverse-bias the p-n junction, the p side is made more negative, making it "uphill" for electrons moving across the junction. The conduction direction for electrons in the diagram is right to left, and the upward direction represents increasing electron energy.

Forward-Bias of P-N Junction

To forward bias the p-n junction, the p side is made more positive, so that it is "downhill" for electron motion across the junction. An electron can move across the junction and fill a vacancy or "hole" near the junction. It can then move from vacancy to vacancy leftward toward the positive terminal, which could be described as the hole moving right. The conduction direction for electrons in the diagram is right to left, and the upward direction represents increasing electron energy.



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  1. is pn junction working is similar to a pn diode?

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  2. what are breakdown effects on pn junction during reverse bias?

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